| PART |
Description |
Maker |
| HAT1026R-EL-E HAT1026R |
7 A, 30 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FMC05N50E |
N-CHANNEL SILICON POWER MOSFET
5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET T-PACK(S), 3 PIN
|
Fuji Electric Holdings Co., Ltd.
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| 2SK1008-01 |
4.5 A, 500 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL SILICON POWER MOSFET
|
FUJI[Fuji Electric]
|
| 2SK3610-01 |
N-CHANNEL SILICON POWER MOSFET
10 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC CO LTD
|
| ECH8602M |
6 A, 30 V, 0.031 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
N-Channel Silicon MOSFET
|
Sanyo Semicon Device
|
| RJK0349DPA RJK0349DPA-00-J0 |
45 A, 30 V, 0.0043 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 2SK3525 2SK3525-01MR |
N CHANNEL SILICON POWER MOSFET
XTAL CER SMT 6X3.5 2PAD 8 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
|
| RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
|
